FDS010 In Stock

Description: 200 - 1100 nm Si Photodiode with a Ø1 mm Active Area

Part Number FDS010
Category Light Analysis
Manufacturer ThorLabs

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ThorLabs FDS010



The FDS010 by ThorLabs is an exceptional silicon photodiode that enables accurate measurement of continuous wave (CW) and pulsed fiber light sources. Its advanced technology converts optical power to electrical current, making it an ideal solution for various applications. The FDS010 comes with a remarkable wavelength range of 200 - 1100 nm, with a 1 ns rise time, and an active area of Ø1 mm. It is housed in a TO-5 package with an anode and cathode connection, which ensures its long-term durability and reliability.

The FDS010 anode produces a current that is proportional to the incident light power and wavelength, providing a precise and accurate measurement of the optical power. The responsivity of the photodiode can be estimated by measuring the amount of photocurrent and converting it to voltage by placing a load resistor to the circuit ground from the photodiode anode. It is worth noting that the FDS010 may exhibit inhomogeneity on the edge of the active area, which can generate unwanted capacitance and resistance that may distort the time-domain response of a photodiode. Therefore, it is highly recommended that the incident light on the photodiode be well-centered on the active area by using a focusing lens or pinhole in front of the detector element.

The responsivity of a FDS010 photodiode is a crucial measure of its sensitivity to light, which is defined as the ratio of the photocurrent IP to the incident light power P at a given wavelength. The FDS010 has a varying amount of responsivity depending on the incident light wavelength, voltage applied in reverse bias and the environmental temperature. It slightly increases with applied reverse bias, which improves the charge collection efficiency in the photodiode. Contrarily, the band gap width changes inversely with the alteration in temperature. This is due to the fluctuation of temperature which affects the amount of energy present.

Wavelength Range 200 - 1100 nm
Active Area 0.8 mm2 (Ø1.0 mm)
Rise / Fall Time 1 ns / 1 ns @ 830 nm, 10 V
Package TO-5
Sensor Material Silicon
Maximum Bias (Reverse) Voltage 25 V
Dark Current 0.3 nA (Typ.) @ 10 V
Operating Temperature -25 to 75 °C


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